This article presents the basic analysis and design equations of a 2-transistor configuration using both polarities of transistors: the “complementary” two-BJT configuration. Transistor combinations ...

New vertical device architecture promises stable, ultra-dense semiconductor stacking for future AI and high-performance ...

The basic construction of Bipolar Junction Transistor (BJT) comprises of two P-N junctions producing three connecting terminals with each terminal being given a name to identify it from the other two.

A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer Science at DGIST has developed "dual-modulated vertically stacked transistors ...

Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel lengths, advancing low-power 3D chip integration.

The power factor corrector (PFC) front end of an off-line power supply is subject to the operating frequency limitation caused by the Miller Effect of its associated power MOSFET. This effect is a ...

We’ve previously remarked upon a generation lucky enough to be well-versed in microcontrollers and computersised electronics through being brought up on the Arduino or the Raspberry Pi but unlucky ...

Share on Facebook (opens in a new window) Share on X (opens in a new window) Share on Reddit (opens in a new window) Share on Hacker News (opens in a new window) Share on Flipboard (opens in a new ...

Conjugated polymers are the subject of intensive research and development, as they promise large area fabrication of semiconductor devices via low-temperature solution processing. With regard to ...

Control of heat flow is crucial for thermal logic devices and thermal management, with theoretical exploration preceding limited experimental progress in actively controlling heat flow. The device ...