There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...

The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher ...

Navitas Semiconductor has announced a new level of reliability for its SiC MOSFETs to meet the requirements of the most demanding automotive and industrial applications. These new ‘AEC-Plus’ 650-V and ...

Thanks to their performance characteristics [1], [2], silicon carbide (SiC) power devices are establishing themselves on the market as valid replacements for MOSFETs and IGBTs based on silicon ...

The University of Warwick has secured major new funding to boost the UK’s ability to test the reliability of advanced ...

3.3 kV SiC MOSFETs and Schottky Barrier Diodes (SBDs) extend designers’ options for high-voltage power electronics in transportation, energy and industrial systems CHANDLER, Ariz., March 21, 2022 ...

Dig into the details of just how reliable are some GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies are for S-Band and X-Band. August 14th, 2019 - By: Wolfspeed, a ...

CHANDLER, Ariz., March 16, 2020 (GLOBE NEWSWIRE) -- Demand continues to rapidly grow for Silicon Carbide (SiC)-based systems to maximize efficiency and reduce size and weight, allowing engineers to ...

While the electric-vehicle market continues to grow, challenges remain to achieve widespread adoption. One trend to address those issues is the development of 800-V EV bus drive systems based on ...