Applications for the eGaN FET include high-speed dc/dc power supplies, PoL converters, Class D audio amplifiers, hard-switched and high-frequency circuits. Also available is the EPC9004 companion ...
The EPC2014 eGaN FET is lead free, RoHS-compliant and halogen free. It is a 1.87 mm2, 40-VDS, 10−A device with a maximum RDS(ON) of 16 mΩ with 5 V applied to the gate. The eGaN FET has a maximum ...
Outfitting designs in the K-Band at 20 GHz, the NE3517S03 GaAs FET features a low-cost Micro-X plastic package measuring 2.6 mm x 2.6 mm x 1.5 mm that does not reduce performance compared to a ceramic ...
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